.5-1.2.5-1.2.5-1.2Wavelength&Cut-off&-&Microns3.03.02.7Peak&Wavelength&Response&-&Microns2.52.52.2Time&Constant&-&Microseconds&100100-300&300Resistance&-&Megohms.2-2.0.2-2.0.5-10注:型号中的M为密封封装.活性区参数CodeNumberActive&AreaBias&VoltageTypical&&VW-1ResponsivityPackageSizeInchesmmTypicalMaximum.25.010.2510201.0x106TO-5&&&TO-46.5.020.520406.0x105TO-5&&&TO-461.0401501003.0x105TO-5&&&TO-462.08021002001.5x105TO-53.12031503001.0x105TO-55.20052505006.0x104TO-810.4001050010003.0x104TO-3机械参数TO-46TO-5　TO-8TO-3典型应用电路:　2.&电子冷却硫化铅光敏电阻系列电气参数Test&Conditions&at&25°&C&-TypicalDD2D21**D*&(Pk.,600,1)&x&10111.52.52.8Wavelength&Cut-off&-&Microns3.13.23.3Peak&Wavelength&Response&-&Microns2.52.52.5Time&Constant&-&Milliseconds1-2.51-2.51-2.5Resistance&-&Megohms.5-10.5-10.5-&5Operating&Temperature&-&°C-20-30-45Cooler&Power&-&Volts&DC/Amps.8V/1.8A.8V/1.4A2.0V/1.4ANOTE:&3-6&Stage&Thermoelectric&Coolers&and&Vacuum&LN&Dewars&also&available.&Contact&us&for&further&details.**TO-8,&TO-66&or&TO-3&packages&only.活性区参数CodeNumberActive&AreaBias&VoltageTypical&VW-1X105ResponsivityPackageSizeInchesmmTypicalMaximum-20-30-451.0401501006.09.013.0TO-5-37-8-662.08021002003.04.56.5TO-5-37-8-663.12031503002.53.54.5TO-5-37-8-665.20052505001.22.03.0TO-8-6610.400105001000.61.01.5TO-3机械参数3.&硫化铅线阵，参考价格每套$528。主要性能:Array&
PbS&Array&1-3&microns&
PbSe&Array&1-5&microns&
PbS&D*&&8&x&1010&Note&
PbSe&D*&&3&x&109&Note&
Square&or&rectangular&geometry&
Pitch&down&to&59&microns&
Pixels&256&
Thermoelectrically&cooled&
TE&Cooler&Controller&
Operating&temp.&down&to&253K&
Optical&filters&
Custom&designs&Multiplexing&
DC&integrating&
Dark&current&subtraction&
Sample&rates&from&100&Hz&to&1.2&MHz&
Independent&or&slave&operation&
Custom&interfaces&available&
Integration&times&from&0.05&msec&to&0.66&sec.&System&Requirements&
±12&to&±15VDC&
TE&Cooler&5V&@&2&amps&(typical)&Amplifier&SpecificationsOutput&voltage&range&up&to&±12V&
Output&current&2-3&mAmp&typicaland&up&to&30&mAmp&available&
Adjustable&output&gain&available&4.&硒化铅光敏电阻电气参数Test&Conditions&at&25°C&-&TypicalF&&&FMFA&&&FAMFS&&&FSMD*&(Pk.,1000,1)&x&1091.0&-&3.03.0&-&6.0&6.0Wavelength&Cut-off&-&Microns4.5&-&5.04.5&-&5.04.5&-&5.0Peak&Wavelength&Response&-&Microns3.8&-&4.33.8&-&4.33.8&-&4.3Time&Constant&-&Microseconds1&-&31&-&31&-&3Resistance&-&Megohms.1&-&4.1&-&4.1&-&4活性区参数CodeNumberActive&AreaBias&VoltageTypical&VW-1PackageSizeInchesmmTypicalMaximum1.0401501006,000TO-5&&&TO-462.08021002003,000TO-53.12031503002,000TO-55.20052505001,200TO-810.400105001000600TO-3机械参数TO-46TO-5　　TO-8TO-3　5.&电子冷却硒化铅光敏电阻电气参数Test&Conditions&at&25°&CGG2G21**GS21**D*&(Pk.,1000,1)&x&1010.71.21.52.0Wavelength&Cut-off&-&Microns5.25.35.45.4Peak&Wavelength&Response&-&Microns4.34.54.64.6Time&Constant&-&Micro&Seconds10152020Resistance&-&Megohms.2&-&7.2&-&10.2&-&15.2&-&15Operating&Temperature&-&°C-20-30-45-45Cooler&Power1.2V/1.8A1.3V/1.6A2.2V/1.2A2.2V/1.2ANOTE:&3-6&Stage&Thermoelectric&Coolers&and&LN2&Dewars&available.&Please&contact&us&for&further&details.**TO-8,&TO-66&and&TO-3&packages&only.　活性区参数CodeNumberActive&AreaBias&VoltageTypical&VW-1ResponsivityPackageSizeInchesmmTypicalMaximum-20-30-451.04015010090001300016000TO-5-37-8-662.08021002005000800011000TO-5-37-8-663.1203150300300050006500TO-5-37-8-665.2005250500200030003500TO-8-6610.400105001000100015001800TO-3机械参数　6.&硒化铅线阵，参考价格每套$528。主要性能:Array&
PbS&Array&1-3&microns&
PbSe&Array&1-5&microns&
PbS&D*&&8&x&1010&Note&
PbSe&D*&&3&x&109&Note&
Square&or&rectangular&geometry&
Pitch&down&to&59&microns&
Pixels&256&
Thermoelectrically&cooled&
TE&Cooler&Controller&
Operating&temp.&down&to&253K&
Optical&filters&
Custom&designs&Multiplexing&
DC&integrating&
Dark&current&subtraction&
Sample&rates&from&100&Hz&to&1.2&MHz&
Independent&or&slave&operation&
Custom&interfaces&available&
Integration&times&from&0.05&msec&to&0.66&sec.&System&Requirements&
±12&to&±15VDC&
TE&Cooler&5V&@&2&amps&(typical)&Amplifier&SpecificationsOutput&voltage&range&up&to&±12V&
Output&current&2-3&mAmp&typicaland&up&to&30&mAmp&available&
Adjustable&output&gain&available&Note:&These&D*&values&are&for&unmultiplexed&arrays.&D*&is&affected&by&sample&rates,&integration&times,&etc.7.&InGaAs&PIN光电二极管探测器InGaAs&PIN&Photodiode&Detectors&RT&非致冷型&主要性能:&
低暗电流,低电容,高响应.&
Mesa&结构,&无信号时不导电.&
适合于DC&-&3GHz,&以及光纤应用.&Part&#Diameter&mmResp.&A/W&@1.3μmResp.&A/W&@1.55μmDark&Current&nACutoff&Freq.&MHzCap.&pfShunt&Res.&MΩPeak&D*&cm*Hz½/WNEP&W/Hz½I5-.04-46.040.85.90.0753000.69000&1012&10-14I5-.08-46.080.85.90.102200.97000&1012&10-14I5-.1-46.100.85.90.15200016000&1012&10-14I5-.3-46.300.85.90.43505900&1012&10-14I5-.5-46.500.85.90.720010250&1012&10-13I5-1-461.00.85.9023010090&1012&10-13I5-2-52.00.85.908360020&1012&10-13I5-3-53.00.85.90201.7512009&1012&10-13I5-5-85.00.85.9030.540002&1012&10-12I5-10-310.00.85.90100.1514000.5&1012&10-12　&
紫外发光二极管&深紫外发光二极管&近紫外发光二极管牙医蓝大功率发光二极管&大功率深紫外发光二极管&发光二极管驱动&　激光二极管&气体分析用激光二极管&超辐射激光二极管&　通用激光二极管&　激光二极管驱动控制器&　光纤耦合激光二极管激光二极管配件大功率泵浦激光二极管模块&半导体光学放大器&红外发光二极管&大功率红外发光二极管&中红外发光二极管&发光二极管驱动&近红外发光二极管&光电探测器&热电堆探测器&硅光电探测器&热释电探测器锗光电探测器&中红外光电探测器InGaAs光电探测器&紫外探测器&　双波段探测器&CMOS光电二极管阵列TDI&成像器成像管多路缓冲器光电倍增管光电二极管光电晶体管光敏电阻光子计数模块冷却型CCD传感器模拟光学隔离器线性扫描成像器医用传感器紫外光传感器常用光电传感器/模块资料下载&红外测温仪/红外热像仪&常用红外温度传感器系列&常用红外温度传感器及资料下载红外温度传感器模块摸组&&红外线温度传感器一&红外线温度传感器二&红外线温度传感器三&红外线温度传感器&四&&红外测温模块一&红外测温模块二&红外测温模块&三&红外测温模块&四&红外热像红外气体分析红外行业应用红外相关配件红外技术资料&&光电开关/光电传感器　ST138-139ST279ST288AST133　ST420ST133ST150SS-030​&&雷射模组（激光模组）　国产2-LMS29A2-LMS29B2-LMS29C2-LM102-LM235B-32-LM235B-3L2-LM212-ATLMF-R(3)L2-ATLMF-R3　　　　　带尾纤器件&　　　　InGaAs（铟镓砷）光电探测器（nm）&　　　　Ge（锗）光电探测器（800-1800nm）&　　　　InAs（砷化铟）光电探测器（nm）&　　　　PbS（硫化铅）光电探测器（nm）&　　　　MCT(碲镉汞)光电探测器（nm）&　　MCT(碲镉汞)光电探测器（2-20+nm）&　　　　InSb（锑化铟)光电探测器（nm）&　　　　荧光检测模块&带尾纤器件激光二极管　　激光模组　&&&&&&&&&&　双向器件&　型号峰值波长(nm)功率(mw)阈值电流(mA)工作电压(V)光谱宽度(nm)上升时间(ns)PB131513101.551.110.3PW1.25GBs13101.551.110.3PW113101.551.110.3PW13ST131035501.2--PW85ST85035501.8354.5PWFSAN15513101.551.11?　&
带尾纤边缘发光型LED&型号中心波长(nm)光谱宽度(nm)光纤耦合功率(mW)封装类型(-)SugarCubes1270　45　PE13W0051FCA-0-0-011300608Pigtailed&FC/PC&ConnectorPE13W010ST71-Q-013006015Receptacle&ST&StylePE13W015FC11-Q-013006020Receptacle&ST&StylePE13W010FC21-Q-013006015Receptacle&ST&StylePE13W0151STA-0-0-0113006020Pigtailed&FC/PC&Connector　&
带尾纤激光二极管&型号波长(nm)最小光纤耦合功率(mw)阈值电流(mA)工作电流(mA)监测光电管电流(mA)PL63C005100A&-0-0-01635150700.5PL63H003300A&-0-0-01635345550.2PL65T0.8UN11-T-06500.830350.07PL65Q0.8UN11-T-06500.840500.10PL65T-0-01650130350.07PL65R005FC14-T-0655525350.1PL66N0026FCA&-0-0-01658245850.05PL67T0016STA-0-0-01670145700.5PL66N005100A&-0-0-01658545850.05PL13H1201OOA-0-P-011310　2030　PL15H1001OOA-0-P-011550　3050　PL78C0.51FCB-T-0-017850.535450.1PL78H0037FCD-U-0-017853451400.025PL78M001FC11-T-0780125400.45PL78R0012STA-0-0-01785125450.3PL78T040FC2D-T-078540301000.1PL85B0023FCA-0-0-0185025300.2PL83H0103FCA-0-0-018301040800.04PL98A0038FAA-0-0-0198035800.4PL13U001100B&-R-0-01131016180.1　型号波长(nm)最小光纤耦合功率(mw)阈值电流(mA)工作电流(mA)监测光电管电流(mA)PL13U0.5FC11-S-013100.56180.8PL13N0021FAA-0-0-011310210200.8PL15M0011SCA-0-0-011550110300.8PL15M0.51SCC-R-0-0115500.515300.8PL15N001FCG-R-0-011550110200.8PL15N002FC0-0-0-011550210200.8PL16M-0-011615115300.1PL16M001FC11-S-01615115300.8PL16M-0-011615215300.8PL16M001SC21-S-011615115300.8PL16M0.51FAA-0-0-0116150.515300.8PL16M0.5FC21-S-016150.515300.8PL16M0.5FC11-S-016150.515300.8PL15M0.51FAC-R-0-011550110300.8PL15M0011SAA-0-0-01131016180.8PL13U0011SAA-0-0-0113100.56180.8PL13U0.51FAA-0-0-0113100.56180.8　&
带尾纤边缘发光型LED&型号波长(nm)工作电流(mA)光纤类型(-)光纤耦合功率(mW)管脚输出(-)光谱宽度(nm)上升时间(ns)PSLEDSeries　　　　　　　PS85K015SC22-Q-085010050/12520D356.0PS13T030FC12-Q-0131010050/12535D1603.0PS13L015SC22-Q-0131010050/12520D1603.0PS13L-0-01131010062.5/12535D1603.0PS86M025FC12-Z-08606050/12545A507.0PS85K-0-0185010062.5/12540D356.0　&
带尾纤VCSEL&型号波长(nm)工作电流(mA)光纤类型(-)光纤耦合功率(mW)管脚输出(-)光谱宽度(nm)上升时间(ns)PV85A0.53FCA-0-0-01*8503.562.5/1256004&lead0.85100&psecPV85L0.5FC12-Z-0*8503.550/1256003&lead0.85100&psecPV85L0.62STD-Z-0-018503.550/125/9006003&lead0.85100&psecPV85L0.9ST74-Z-08503.562.5/12510003&lead0.85100&psecPV85W0.53STA-0-0-01*8503.562.5/1256003&lead0.85100&ps　&
&&InGaAs（铟镓砷）光电探测器（nm）一、铟镓砷PIN管&型号光敏面积(mm&dia)波长范围(nm)IGA&-&0010.1IGA&-&0030.1IGA&-&0031IGA&-&0032IGA&-&0033IGA&-&0035IGA&-&0031IGA&-&0032IGA&-&0033IGA&-&0035IGA&-&0030.3IGA&-&0031IGA&-&0031IGA&-&0031IGA&-&0031IGA&-&0033二.&大感光面积铟镓砷探测器&产品特点：&光谱响应范围：&900nm-1700nm&感光面积：&直径1mm、1.5mm、3mm可选&灵敏度高&暗噪声低响应速度快&TO-5或TO-18封装&　　　型号受光面直径响应灵敏度1310nm响应灵敏度1550nm分流电阻结电容封装InGaAS-10001&mm0.9&A/W0.95&A/W30&MΩ&Vr&=&10mV80&pF&Vr=0VTO-18InGaAS-1500-X1.5&mm0.9&A/W0.95&A/W20&MΩ&Vr&=&10mV200&pF&Vr=0VTO-18InGaAS-3000-X3&mm0.9&A/W0.95&A/W20&MΩ&Vr&=&10mV750&pF&Vr=0VTO-5额定参数　&
型号存储温度范围工作温度范围焊接温度封装形式InGaAS-1000-55&to&125&°C&-40&to&75&°C260&°CTO-18InGaAS-1500-X-55&to&125&°C&-40&to&75&°C260&°CTO-18InGaAS-3000-X-55&to&125&°C&-40&to&75&°C260&°CTO-5三.&高速铟镓砷光电二极管　产品特点：响应速度快，最高可到9G&Hz&暗电流低存&带低噪声前置放大器，差分输出&标准TO系列封装　&
动态范围宽&型号受光面直径间距响应灵敏度&1310nm响应灵敏度&1550nm暗电流结电容反偏电流正向电流带宽崩溃电压InGaAs-300B1300&μm---0.8&A/W&front&&&back0.85&A/W&front&&&back0.05&nA&Vr=-5V8&pF&Vr=-5V5&mA&max25&mA&max100&MHz10V&at&1μmInGaAs-300B1x4300&μm500&μm0.8&A/W&front&&&back0.85&A/W&front&&&back0.05&nA&Vr=-5V8&pF&Vr=-5V5&mA&max25&mA&max100&MHz10V&at&1μmInGaAs-300B1x8300&μm500&μm0.8&A/W&front&&&back0.85&A/W&front&&&back0.05&nA&Vr=-5V8&pF&Vr=-5V5&mA&max25&mA&max100&MHz　四.&陶瓷封装型光通信光电二极管&产品特点：&带低噪声前置放大器，差分输出&带宽高，动态范围宽&暗电流低&+3.3V单电源供电&陶瓷封装&　&
&&&Ge（锗）光电探测器（800-1800nm）一、常温条件下锗光电探测器&型号尺寸(mm)波长范围(nm)G&-&0101800-1800G&-&0202800-1800G&-&0303800-1800G&-&0505800-1800G&-&10010800-1800G&-&13013800-1800二、制冷型锗光电探测器型号尺寸(mm)波长范围(nm)G-010-TE21800-1800G-020-TE22800-1800G-030-TE23800-1800G-050-TE25800-1800G-100-TE210800-1800G-130-TE213800-1800InAs（砷化铟）光电探测器（nm）一、常温条件下砷化铟光电探测器&
型号尺寸（mm）波长范围(nm)IA&-&0101IA&-&0202二、制冷型砷化铟光电探测器型号尺寸(mm)波长范围(nm)IA-010-TE2/TO81IA-020-TE2/TO82　PbS（硫化铅）光电探测器（nm）一、常温条件下硫化铅光电探测器&型号尺寸（mm）波长范围(nm)PBS&-&0101PBS&-&0202PBS&-&0303PBS&-&0505PBS&-&0606PBS&-&10010二、制冷型硫化铅光电探测器型号尺寸(mm)波长范围(nm)PBS&-&010&-&TE11PBS&-&010&CTE21PBS&-&020&-&TE12PBS&-&020&CTE22PBS&-&030&-&TE13PBS&-&030&CTE23PBS&-&050&-&TE15PBS&-&050&CTE25PBS&-&060&-&TE16PBS&-&060&CTE26MCT(碲镉汞)光电探测器（nm）一、常温条件下MCT光电探测器&
型号尺寸(mm)波长范围(nm)MCT&-&4.5-0101nmMCT&-&5.0-0101nm二、制冷型MCT光电探测器型号尺寸(mm)波长范围(nm)MCT&-&4.5-010-TE21MCT&-&5.0-010-TE21MCT(碲镉汞)光电探测器（2-20+nm）碲镉汞光电探测器&型号尺寸(mm)波长范围(nm)MCT10-00250.252-12+MCT10-0050.52-12+MCT10-01012-12+MCT10-02022-12+MCT14-00250.252-15+MCT14-0050.52-15+MCT14-01012-15+MCT14-02022-15+MCT20-0050.52-20+MCT20-01012-20+InSb（锑化铟)光电探测器（nm）锑化铟光电探测器&
型号尺寸(mm)波长范围(nm)IS-00251IS-0101IS-0201IS-0301IS-0401IS-0501IS-0701IS-1001荧光检测模块您所在位置： &
&nbsp&&nbsp&nbsp&&nbsp
光电探测器基本原理2.ppt 27页
本文档一共被下载：
次 ,您可全文免费在线阅读后下载本文档。
下载提示
1.本站不保证该用户上传的文档完整性，不预览、不比对内容而直接下载产生的反悔问题本站不予受理。
2.该文档所得收入(下载+内容+预览三)归上传者、原创者。
3.登录后可充值，立即自动返金币，充值渠道很便利
需要金币：350 &&
光电探测器基本原理2
你可能关注的文档：
··········
··········
光电探测器概述;常见的光电探测器;光电探测器是指能把光辐射能量转换为一种便于测量的物理量的器件。;光电效应分类：;二、外光电效应;一、光电效应定义及分类;;光电发射大致可分三个过程：;光电管原理;光电倍增管;三、内光电效应器件;光电导效应;光敏电阻;;;典型光敏电阻;;;HgCdTe系列光电导探测器件HgCdTe系列光电导探测器件是目前所有红外探测器中性能最优良最有前途的探测器件，尤其是对于4~8μm大气窗口波段辐射的探测更为重要。HgCdTe系列光电导体是由HgTe和CdTe两种材料的晶体混合制造的。在制造混合晶体时选用不同Cd的组分，可以得到不同的禁带宽度Eg，便可以制造出不同波长响应范围的探测器件。;光敏电阻的主要特性参数;光敏电阻的使用;光敏电阻的特点;主要应用;光生伏特效应;;;谢谢!
正在加载中，请稍后...